Aluminium Copper Sputtering Target

Aluminum Copper Sputtering Target is produced by melting technology, usually used for IC production. Comparing to aluminium interconnects, high purity aluminium copper AlCu(0.5-4%) interconnects have more uniform inner micro-structure, and the interconnects’ electromigration and diffusion to wafer can be improved effectively. With up to 5N purity, uniform grain size, lower oxygen content, end user can obtain constant erosion rates as well as high purity and homogeneous thin film coating during PVD process.

Features

Chemical Composition: AlCu99.5/0.5wt%, AlCu99/1wt%, AlCu98/2wt%, AlCu95/5wt%

Segregation of weight: +/-0.5wt%

Available Purity: 3N, 4N, 5N

Production Technology: melting

Shapes: planar targets

Average Grain Size: < 300um, structure of fine grains can be customized   

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